In a development that the company claims could meet a future demand for higher density NAND flash memory, at the VLSI Symposium in Japan today Toshiba Corp. announced a new three-dimensional memory ...
SAN JOSE, Calif., May 13, 2024 /PRNewswire/ -- NEO Semiconductor, a leading developer of innovative technologies for 3D NAND flash and DRAM memory, today announced a performance boosting Floating Body ...
Released every 12 to 18 months, 3D NAND scaling outpaces most other semiconductor devices in replacement rate and performance ...
NEO Semiconductor has announced that it has developed the "world's first 3D NAND-like DRAM cell array," which aims to increase DRAM chip density using established 3D stacking technology. Designed to ...
For several decades, NAND Flash has been the primary technology for low-cost and large-density data storage applications. This non-volatile memory is present in all major electronic end-use markets, ...
Micron’s 176L 3D NAND is the world’s first 176L 3D NAND Flash memory. TechInsights just found the 512Gb 176L die (B47R die markings) and quickly viewed its process, structure, and die design. Micron ...
The late 1990s saw the widespread introduction of solid-state storage based around NAND Flash. Ranging from memory cards for portable devices to storage for desktops and laptops, the data storage ...
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