Business Wire

Toshiba Develops Industry’s First 2200V Dual Silicon Carbide(SiC) MOSFET Module That Contributes to High Efficiency and Downsizing of Industrial Equipment

KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has developed “MG250YD2YMS3,” the industry’s first [1] 2200V dual silicon carbide (SiC) MOSFET module for ...
Business Wire

Mitsubishi Electric Expands Silicon Carbide Power Device Lineup With Industry Standard Package Dual Device

CYPRESS, Calif.--(BUSINESS WIRE)--Mitsubishi Electric US, Inc. recently launched a new Silicon Carbide (SiC) power module FMF400DY-24B. The 400A, 1200V Dual SiC MOSFET module includes an anti-parallel ...
EDN

100-A dual SiC MOSFET modules operate from –40° to 200°C

The QJD1210006 and QJD1210007 silicon carbide (SiC) MOSFET modules operate at –40° to 200°C, well beyond those possible with silicon IGBT-based modules. The modules are constructed in half-bridge ...
EDN

Dual SiC MOSFET handles 2200 V

Toshiba has begun volume shipping of the MG250YD2YMS3, a dual SiC MOSFET module with a drain-source voltage rating of 2200 V for use in industrial equipment. Intended for 1500-VDC applications, such ...
Business Wire

Toshiba Launches Silicon Carbide MOSFET Module That Contributes to Higher Efficiency and Miniaturization of Industrial Equipment

Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched “MG800FXF2YMS3,” a silicon carbide (SiC) MOSFET module integrating newly developed dual channel SiC MOSFET chips with ratings ...
Electronic Design

Low-Profile SiC MOSFET Modules Featuring Multiple Circuit Topologies

Powerex has created with a low profile and multiple circuit topologies, including independent; dual; in parallel; common collector; and common emitter, two new Powerex split dual SiC MOSFET Modules ...
电子工程专辑

EconoDUAL™ 3 1200V/1.4mΩ CoolSiC™ MOSFET Module

The module features the enhanced first-generation M1H chip, integrated NTC temperature sensor, and PressFIT pins. It is available in two variants: - A TIM (Thermal Interface Material) pre-applied ...
Electronic Design

Dual MOSFET Increases Power Density In Synchronous Buck Applications

The FDMC8200 dual MOSFET delivers higher efficiency and power density for notebooks, netbooks, servers, telecom, and other DC-DC designs. The product integrates an optimized control (high-side) and ...
New Electronics

Silicon carbide MOSFET module solutions for charging EVs

ON Semiconductor has announced a pair of 1200 V full silicon carbide (SiC) MOSFET 2-PACK modules further enhancing the company's range of products suitable for the electric vehicle (EV) market. When ...
New Electronics

Toshiba introduces compact, but efficient, SiC MOSFET modules

Toshiba Electronics Europe has leveraged its expertise in wide bandgap (WBG) semiconductor processes to introduce a compact but efficient MOSFET module. The MG800FXF2YMS3 incorporates 3300V-rated dual ...