A new technical paper titled “Embedding security into ferroelectric FET array via in situ memory operation” was published by researchers at Pennsylvania State University, University of Notre Dame, ...
A technical paper titled “28 nm high-k-metal gate ferroelectric field effect transistors based synapses- A comprehensive overview” was published by researchers at Fraunhofer-Institut für Photonische ...
(Nanowerk News) Shigeki Sakai and others of Ferroelectric Memory Group, the Nanoelectronics Research Institute of the National Institute of Advanced Industrial Science and Technology (AIST), have ...
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