In 1947, Shockley, Brattain and Bardeen were investigating the field effect transistor but lead them into inventing the bipolar transistor instead. In 1952, the field effect transistor of Shockley was ...
A semiconductor amplifying device with up to 100-meg input impedance is now available from an American manufacturer. (Some French firms already have announced field-effect devices.) Crystalonics, ...
This course presents in-depth discussion and analysis of metal-oxide-semiconductor field-effect transistors (MOSFETs) and bipolar junction transistors (BJTs) including the equilibrium characteristics, ...
A graphene layer consists of carbon atoms linked by covalent bonds, forming a honeycomb structure. Its excellent electron mobility, chemical and physical stability, electrical and thermal conductivity ...
A research team has developed an n-channel diamond MOSFET (metal-oxide-semiconductor field-effect transistor). The developed n-channel diamond MOSFET provides a key step toward CMOS (complementary ...
A new publication from Opto-Electronic Science; DOI 10.29026/oes.2024.230046 discusses photo-driven Fin Field-Effect Transistors. Infrared detectors are the core components of infrared detection ...
WASHINGTON, December 21, 2021 -- Demand for sensitive and selective electronic biosensors -- analytical devices that monitor a target of interest in real time -- is growing for a wide range of ...
A new technical paper titled “A Cryogenic Ultra-Thin Body SiGeSn Transistor” was published by researchers at TU Wien, ...
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