KIOXIA America, Inc. today announced that it has begun sampling 1 new Universal Flash Storage 2 (UFS) Ver. 4.1 embedded memory devices with 4-bit-per-cell, quadruple-level cell (QLC) technology.

SAN JOSE, Calif.--(BUSINESS WIRE)--KIOXIA America, Inc. today announced that its Universal Flash Storage 1 (UFS) Ver. 4.0 embedded flash memory devices designed for automotive applications have ...

SAN JOSE, Calif.--(BUSINESS WIRE)--KIOXIA America, Inc. today announced sampling 1 of the industry’s first 2 Universal Flash Storage 3 (UFS) Ver. 4.0 embedded flash memory devices 3 designed for ...

This article is in the TechXchange: Cool Designs and the Flash Memory Summit 2023 digital issue. In any electronic design, power management is as much about managing thermals as it is about limiting ...

SanDisk on Wednesday introduced an interesting new memory that could wed the capacity of 3D NAND and the extreme bandwidth enabled by high bandwidth memory (HBM). SanDisk's high-bandwidth flash (HBF) ...

Recently a team at Fudan University claimed to have developed a picosecond-level Flash memory device (called ‘PoX’) that has an access time of a mere 400 picoseconds. This is significantly faster than ...

Octal flash memory, or octal data transfer interface, utilizes eight data lines for input and output operations, resulting in significantly higher data transfer rates compared to serial, dual, and ...