Designed for demanding power conversion environments, the new devices enable faster switching, smaller systems, and improved ...

GlobalFoundries (GF) to develop and manufacture advanced gallium nitride (GaN) power products using GF’s 200mm eMode GaN-on-silicon process, starting with 650V. This collaboration accelerates onsemi’s ...

The Wide Bandgap Semiconductor Market is gaining strong momentum due to rising demand for energy-efficient power devices across electric vehicles, renewable energy systems, fast chargers, data centers ...

Onsemi has signed a collaboration agreement with GlobalFoundries to develop and manufacture advanced GaN power products using ...

Globalfoundries (GF) and onsemi have signed an agreement to develop and manufacture advanced GaN power products using GF’s ...

Collaboration would add high-volume, cost-optimized, worldwide GaN manufacturing for faster market deployment of ...

In a new collaboration designed to accelerate gallium nitride (GaN) power device deployment, Onsemi and Innoscience have signed a memorandum of understanding for new GaN products for industrial, ...

Gallium-nitride power transistors occupy a unique performance niche. Here is why, along with five GaN devices to consider for your next design. 1. A graph from “Comparative Study of Optimally Designed ...

NexGen Power Systems Inc. is fabricating vertical power devices (vertical gallium nitride, or vertical GaN) using homoepitaxial GaN on GaN substrates. Vertical GaN devices are capable of switching at ...

HAVERHILL, Mass.--(BUSINESS WIRE)--For the past five years EPC Space has been delivering and continues to deliver Rad Hard GaN discrete and module power products which offer higher performance and ...

onsemi has announced a strategic collaboration with GlobalFoundries (GF) to develop and manufacture advanced gallium nitride ...

Summary: onsemi expands its leadership in intelligent power through a new collaboration agreement with GlobalFoundries (GF) to develop and ...