In this eGaN FET-silicon power shoot-out series article, we examine RF performance using the 200 V EPC2012 [3] eGaN FET as a starting point. The eGaN FET is optimized as a power-switching device but ...
Level-crossing analog-to-digital converters (LC-ADCs) represent an innovative approach to signal digitisation that departs from conventional uniform sampling. Instead of capturing signals at fixed ...
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