Tech Xplore on MSN
New semiconductor etching process achieves five-fold speed improvement
After more than a decade of research and development, Tokyo Electron Miyagi Ltd. has introduced an innovative semiconductor ...
Quadrupole mass-spectroscopy has reported significant neutral and ionic species in the unique C 5 HF 7 /O 2 /Ar plasma, including C x F y (X>2), C x HF y, and C x F y (Y/X<2). Using C 5 HF 7 /O 2 /Ar ...
Discover Tokyo Electron’s new semiconductor etching method for faster, greener, and precise chip production. Read more ...
In dry etching, the trajectory of accelerated ions is non-uniform and non-vertical, due to collisions with gas molecules and other random thermal effects (figure 1). This has an impact on etch results ...
(Nanowerk News) Imec and KLA Tencor have established a metrology method for optimizing the etch rate uniformity (ERU) in a transformer coupled plasma (TCP) reactor. The proposed metrology method makes ...
In this technique, fluorine-based plasma chemistry is used for silicon etching, which is combined with a fluorocarbon plasma process to offer sidewall passivation and enhanced selectivity to masking ...
Released every 12 to 18 months, 3D NAND scaling outpaces most other semiconductor devices in replacement rate and performance ...
An extensive range of insulating thin films are utilized in modern VLSI circuits providing electrical isolation between conducting regions within a device and as a final capping passivation layer.
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