As a part of JST PRESTO program, Associate professor Masaharu Kobayashi, Institute of Industrial Science, the University of Tokyo, has developed a ferroelectric FET (FeFET) with ferroelectric-HfO2 and ...
image: Scientists at Tokyo Institute of Technology have demonstrated the potential of a new, thin-film ferroelectric material that could improve the performance of next-generation sensors and ...
In this work, we will demonstrate first negative capacitance transistor (NCFET) with ferroelectric HfO2 thin film by establishing device design and developing material for ultralow power operation. A ...
Masaharu Kobayashi of Tokyo University has developed a ferroelectric FET (FeFET) with ferroelectric-HfO2 and ultrathin IGZO channel. Nearly ideal subthreshold swing (SS) and mobility higher than ...
Material development for semiconductor and thin film materials requires a full understanding of the material characteristics and how they impact each other. The Thermo Scientific™ Nexsa™ XPS System ...
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