Photo Diode chip active area sizes from 0.1mm to 3.0mm are available to provide the optimum balance between low dark current, high speed and light sensitivity. This allows for increased flexibility ...
Hamamatsu Photonics is pleased to announce the launch of its latest InGaAs Photodiodes (PD) series designed for longer wavelengths. The G1719X series are near-infrared sensors offering high ...
Designed to serve as 1550-nm CW light sources, the NX8570SA and NX8571SA InGaAs DFB laser diode modules deliver 20 mW of power, respectively. The modules feature integrated Etalon filters and dual ...
OSI Laser Diode, Inc. (LDI), an OSI Systems Company, introduces the LAPD 3050, an indium gallium arsenide (InGaAs) avalanche photodiode (APD) module that is designed for light level detection and/or ...
LASER COMPONENTS is a leading producer of InGaAs PIN detectors. From our development and manufacturing facility in Arizona we supply customers all over the world with these long life, industrially ...
Designers need only one detector instead of two when using Hamamatsu Photonics' G10889 series of InGaAs PIN photodiodes, which offer a wide response range of 0.5 to 1.7 microns. With a useful response ...
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