UNTERHACHING, GERMANY: The body diode reverse recovery charge of a SiC MOSFET is lower than that of an Si MOSFET, but still not as beneficial as with SiC Schottky diodes. As the switching performance ...
TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a new Schottky barrier diode (SBD)-embedded silicon carbide (SiC) ...
ROHM has integrated VCSEL technology with MOSFET drivers in a module to achieve the shorter pulses and high output required for more accurate sensing. Conventionally, in VCSEL-equipped laser light ...
For extra-powerful, high-efficiency inverter systems in railcars, electric power systems and more Mitsubishi Electric’s SBD-embedded SiC-MOSFET modules, including the 3.3kV/800A version released on ...
The module features the enhanced first-generation M1H chip, integrated NTC temperature sensor, and PressFIT pins. It is available in two variants: - A TIM (Thermal Interface Material) pre-applied ...
Toshiba Electronics Europe has leveraged its expertise in wide bandgap (WBG) semiconductor processes to introduce a compact but efficient MOSFET module. The MG800FXF2YMS3 incorporates 3300V-rated dual ...
TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will launch a 50W silicon radio-frequency (RF) high-power metal-oxide semiconductor field-effect ...
Texas Instruments Incorporated is expanding its MOSFET driver portfolio with three next-generation two-output gate drivers that improve efficiency and reliability in high-density isolated power ...
For extra-powerful, high-efficiency inverter systems in railcars, electric power systems and more TOKYO–(BUSINESS WIRE)–Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it has begun ...
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