A research team led by Professor Jang-Sik Lee of Pohang University of Science and Technology (POSTECH) has successfully developed the halide perovskite-based memory with ultra-fast switching speed.

The big-data era is witnessing significantly increased demand for smarter and more energy-efficient opto-electronic devices, which is driven by advances in artificial intelligence (AI), 5G network, ...

In the era of big data and machine learning technology, performing low-power in-memory computing operations is becoming an increasingly important requisite. While much advance has been achieved in ...

(Nanowerk Spotlight) Resistive-switching memory (RSM) is an emerging candidate for next-generation memory and computing devices, such as storage-class memory devices, multilevel memories and as a ...

A research team has successfully developed halide perovskite-based memory with an ultra-fast switching speed. A research team led by Professor Jang-Sik Lee of Pohang University of Science and ...