These four SiC modules leverage Qorvo’s unique cascode configuration, which minimizes R DS(on) and switching losses to maximize efficiency, especially in soft-switching applications, Qorvo said. In ...
An expanded line of APTxxxxxxx diode modules offers 35 full-bridge devices in SOT227 packages. They range from 6 to 100 A with voltages from 45 to 1,700 V. The SiC diode modules are available with ...
Santa Clara, CA and Kyoto, Japan, April 24, 2025 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced the development of new 4-in-1 and 6-in-1 SiC molded modules in the HSDIP20 package optimized for ...
A stacked DBC packaging method utilizes mutual inductance cancellation effects to significantly reduce parasitic inductance. With the current path increased by one-fold, SiC power modules allow for ...
The advantages of the latest SiC devices in power modules compared to legacy Si IGBTs for modern power electronics applications. October 16th, 2019 - By: Wolfspeed, a Cree Company With the shift ...
MALVERN, Pa., Dec. 03, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced two new 1200 V MOSFET power modules designed to increase efficiency and reliability for medium ...
STMicroelectronics has released the ACEPACK DMT-32 family of silicon carbide (SiC) power modules in a 32-pin, dual-inline, moulded, through-hole package for automotive applications. Targeted at ...
ROHM has developed 4-in-1 and 6-in-1 SiC moulded modules in the HSDIP20 package that are optimised for PFC and LLC converters in onboard chargers (OBC) for xEVs (electric vehicles). SiC moulded ...
Cree, Inc. is introducing the industry's first commercially available silicon carbide (SiC) six-pack power module in an industry standard 45mm package. Cree, Inc. is introducing the industry's first ...
CYPRESS, Calif.--(BUSINESS WIRE)--Mitsubishi Electric US, Inc. recently launched a new Silicon Carbide (SiC) power module FMF400DY-24B. The 400A, 1200V Dual SiC MOSFET module includes an anti-parallel ...
TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of a new Schottky barrier diode (SBD)-embedded silicon carbide (SiC) ...
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