Trench-based silicon carbide power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) represent a dramatic improvement in the Figure of Merit (FOM) values of power conversion switching ...
GOLETA, Calif.--(BUSINESS WIRE)--Transphorm, Inc. (Nasdaq: TGAN), a global leader in GaN power semiconductors, the future of next generation power systems, today announced it has demonstrated up to 5 ...
Circuit breaker keeps tripping is a warning, not a nuisance. Repeated trips can signal overloads, wiring faults, ground faults, or coordination problems, and misreading the cause risks overheating, ...
A German research team has developed a semiconductor-based protection concept tailored to renewable energy systems that forces a permanent short circuit in less than 1 millisecond in the event of a ...
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