Researchers from North Carolina State University are rolling out a new manufacturing process and chip design for silicon carbide (SiC) power devices, which can be used to more efficiently regulate ...

The impact of materials on designing reliable devices. How packaging plays an important role in SiC MOSFET design. Determining the FIT rate for SiC MOSFETs. There’s no doubt that the material ...

Despite silicon carbide’s (SiC) promise over conventional silicon for the design of next-generation power electronics devices, broad adoption of this high-performance compound semiconductor has been ...

The performance potential of SiC is indisputable. The key challenge to be mastered is to determine which design approach achieves the biggest success in applications. Advanced design activities are ...

Mitsubishi Electric has announced that it will shortly start shipping samples of four new trench SiC-MOSFET bare dies ...

“Abstract: Silicon carbide metal-oxide semiconductor field-effect transistors (MOSFETs) were designed and fabricated for linear-mode applications. The MOSFETs have a chip area of 3.3 ? 3.3 mm and a ...

In power electronics applications, the compound semiconductor silicon carbide (SiC) has been demonstrated in published literature to be a superior material to silicon (Si) in many properties for the ...

We’ve seen how silicon carbide semiconductors offer a path of less resistance that enables higher-voltage power electronics for next-generation electric vehicles with big batteries and fast charging ...

The automation engineers of the 1960s would look with envy at the servo technology in use today. Small, precise, and, above all, electric, they are a reflection of the compactness of the semiconductor ...

No two technologies have generated more buzz in power semiconductors in recent years than GaN (Gallium Nitride) and SiC (Silicon Carbide). Both these wide band-gap (WBG) semiconductors offer several ...