The (Ga, Mn)As ferromagnetic semiconductors used in our work are favourable candidates for observing the optical spin transfer torque 1,2. The direct-gap GaAs host allows the generation of a high ...
Figure 1: Magnetoresistive properties of the Co–Fe–B/MgO/ Co–Fe–B MTJ. Tunnel junctions were fabricated using optical and electron beam lithography combined with an Ar-ion etching technique and a lift ...