Insulated Gate Bipolar Transistors (IGBTs) have become pivotal components in modern power electronic systems, blending the high input impedance and fast switching capabilities of MOSFETs with the high ...
While many research efforts are underway to develop active devices that can function in the challenging terahertz spectrum, others are leapfrogging to try to get some devices operate into the ...
Efficient Power Conversion Corporation has extended the company's family of high-speed, high performance transistors with the EPC8000 family of products. Cutting new ground for power transistors, the ...
A new study represents a significant advance in topological transistors and beyond-CMOS electronics. First time that the topological state in a topological insulator has been switched on and off using ...
What are GaN HEMTs and why are they important? How GaN devices can handle kilowatt power conversion. Gallium-nitride (GaN) high electron mobility transistors (HEMTs) are a form of field-effect ...
Mitsubishi Electric’s new 2.0kV LV100 semiconductor device is based on its insulated-gate bipolar transistor (IGBT) technology and Relaxed Field of Cathode (RFC) diodes. It is designed for industrial ...
< Moritz Gittinger (left) and Daniel Timmer stand in front of the experiment that the study is based o ... Copyright: ...
A fully functional, fast switching and printable transistor in cheap plastic has just been invented. A fully functional, fast switching and printable transistor in cheap plastic is invented by ...
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