Ramtron International Corp. today introduced what it said is the first FRAM memory device to contain one transistor and one capacitor. The device, known as FM24C256-SE, is a 256-kilobit (Kb) two-wire, ...
As mentioned in a previous post, the Flemish Interuniversity Microelectronics Consortium, IMEC, has decided to include the interests of DRAM and non-volatile memory designers in their 32nm half-pitch ...
Most modern electronic devices consist of several key components: transistors, capacitors, resistors, inductors and diodes. Often, they are supplemented by additional components like crystals and ...
For 65nm and later-generation processes, the advanced memory has achieved fast operation (250MHz) and low active power (148mW) in a 2Mbit test chip TOKYO, September 26, 2005 -- Renesas Technology Corp ...
Energy saving: artist’s impression of the gate material with negative capacitance. (Courtesy: Ella Maru Studio) By exploiting a curious effect called negative capacitance, researchers have designed a ...
OTTAWA & TOKYO--May 31, 2006--Renesas Technology Corp., the world's leading microcontroller company, and Emerging Memory Technologies Inc. (EMT), a worldwide leader in embedded memory intellectual ...
A technical paper titled “Gate Drive Circuit Suitable for a GaN Gate Injection Transistor” was published by researchers at Nagoya University. “A GaN gate injection transistor (GIT) has great potential ...
Some results have been hidden because they may be inaccessible to you
Show inaccessible results