Abstract: The split-gate trench (SGT) MOSFET is a vertical power device having a separate field plate (FP) inside a deep trench. This design increases the breakdown voltage (BV) via the reduced ...
Abstract: A large-scale reconfigurable reflect-array antenna (RRA) with 2-bit phase resolution is reported here at the Ka-band. The unit cell is designed based on a segmented resonator with end ...
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