Centre for Materials Science, College of Science, Engineering and Technology, University of South Africa, Johannesburg 1710, South Africa Institute for Nanotechnology and Water Sustainability (iNanoWS ...
Study of Predicting the Performance of I-V Curves Through Photoluminescence Spectral Characteristics
Abstract: Quality of GaN LEDs is closely related to the defects in quantum wells. Effectively evaluating the performance of LEDs is a key step in mass production. Electrical characterization testing ...
GaN-on-Si is the technology of choice for commercially available power HEMT devices. The dominant maximum operating voltage range for these devices is currently at 650 V or lower. Challenges arise in ...
Gallium nitride (GaN) is a binary III/V semiconductor seen as a potential successor to silicon. GaN has a wider bandgap than silicon, meaning it can maintain higher voltages in electronic devices. 1 ...
TEXAS — An 18-wheeler accident in San Jacinto County resulted in a sulfur dioxide (SO2) spill Friday morning, according to the San Jacinto County Office of Emergency Management. The truck driver has ...
Quantum dots (QDs), also known as nanoparticle-based fluorescent probes, are luminescent semiconductor particles with a size range of 2–20 nm. The unique optical and electronic capabilities of QDs ...
The PowerPlex® 35GY System is an advanced 8-dye STR multiplex designed for human identification. This system amplifies 35 loci, including key CODIS and ESS markers, along with Amelogenin and DYS391 ...
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An international research team has fabricated for the first time a perovskite solar cell based on a cadmium-doped formamidinium lead iodide (FAPbI 3) absorber. FAPbI 3 is one of the most promising ...
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